Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications
In this study, electrical characteristics of MoTe<sub>2</sub> field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe<sub>2</sub> crystals, switched from p-type to ambipolar to n-type...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/19/11/2551 |
| _version_ | 1797999562530488320 |
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| author | Asha Rani Kyle DiCamillo Md Ashfaque Hossain Khan Makarand Paranjape Mona E. Zaghloul |
| author_facet | Asha Rani Kyle DiCamillo Md Ashfaque Hossain Khan Makarand Paranjape Mona E. Zaghloul |
| author_sort | Asha Rani |
| collection | DOAJ |
| description | In this study, electrical characteristics of MoTe<sub>2</sub> field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe<sub>2</sub> crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe<sub>2</sub> channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe<sub>2</sub> FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH<sub>3</sub>) sensing, which confirms the p- and n-type behavior of MoTe<sub>2</sub> devices. |
| first_indexed | 2024-04-11T11:06:39Z |
| format | Article |
| id | doaj.art-b4c45b29529f4d739e094779cfc8d7de |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T11:06:39Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-b4c45b29529f4d739e094779cfc8d7de2022-12-22T04:28:17ZengMDPI AGSensors1424-82202019-06-011911255110.3390/s19112551s19112551Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing ApplicationsAsha Rani0Kyle DiCamillo1Md Ashfaque Hossain Khan2Makarand Paranjape3Mona E. Zaghloul4School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USADepartment of Physics, Georgetown University, Washington, DC 20057, USADepartment of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USADepartment of Physics, Georgetown University, Washington, DC 20057, USASchool of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USAIn this study, electrical characteristics of MoTe<sub>2</sub> field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe<sub>2</sub> crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe<sub>2</sub> channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe<sub>2</sub> FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH<sub>3</sub>) sensing, which confirms the p- and n-type behavior of MoTe<sub>2</sub> devices.https://www.mdpi.com/1424-8220/19/11/25512D materialsMoTe<sub>2</sub>channel thickness effectpolarity switching |
| spellingShingle | Asha Rani Kyle DiCamillo Md Ashfaque Hossain Khan Makarand Paranjape Mona E. Zaghloul Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications Sensors 2D materials MoTe<sub>2</sub> channel thickness effect polarity switching |
| title | Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications |
| title_full | Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications |
| title_fullStr | Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications |
| title_full_unstemmed | Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications |
| title_short | Tuning the Polarity of MoTe<sub>2</sub> FETs by Varying the Channel Thickness for Gas-Sensing Applications |
| title_sort | tuning the polarity of mote sub 2 sub fets by varying the channel thickness for gas sensing applications |
| topic | 2D materials MoTe<sub>2</sub> channel thickness effect polarity switching |
| url | https://www.mdpi.com/1424-8220/19/11/2551 |
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