Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture
We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were...
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| Format: | Article |
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IEEE
2011-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/5729307/ |
| _version_ | 1818877346581577728 |
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| author | E. A. Plis S. S. Krishna N. Gautam S. Myers S. Krishna |
| author_facet | E. A. Plis S. S. Krishna N. Gautam S. Myers S. Krishna |
| author_sort | E. A. Plis |
| collection | DOAJ |
| description | We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 10<sup>11</sup> Jones (V<sub>b</sub> = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (V<sub>b</sub> = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR). |
| first_indexed | 2024-12-19T13:56:50Z |
| format | Article |
| id | doaj.art-b4eaad4a7ef94be8a8e37d6dd931cdc8 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-19T13:56:50Z |
| publishDate | 2011-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj.art-b4eaad4a7ef94be8a8e37d6dd931cdc82022-12-21T20:18:35ZengIEEEIEEE Photonics Journal1943-06552011-01-013223424010.1109/JPHOT.2011.21259495729307Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp ArchitectureE. A. Plis0S. S. Krishna1N. Gautam2S. Myers3S. Krishna4<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>SK Infrared, LLC, Lobo Venture Lab 801, Albuquerque, NM, USASK Infrared, LLC, Lobo Venture Lab 801, Albuquerque, NM, USA<formula formulatype="inline"> <tex Notation="TeX">$^{2}$</tex></formula>Center for High Technology Materials, Department of Electrical and Computer Engineering , University of New Mexico, Albuquerque, NM, USACenter for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, USA<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>SK Infrared, LLC, Lobo Venture Lab 801, Albuquerque, NM, USAWe report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 10<sup>11</sup> Jones (V<sub>b</sub> = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (V<sub>b</sub> = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).https://ieeexplore.ieee.org/document/5729307/Optoelectronic materialsnanostructuresInAs/GaSb strained layer superlattices (SLS) |
| spellingShingle | E. A. Plis S. S. Krishna N. Gautam S. Myers S. Krishna Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture IEEE Photonics Journal Optoelectronic materials nanostructures InAs/GaSb strained layer superlattices (SLS) |
| title | Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture |
| title_full | Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture |
| title_fullStr | Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture |
| title_full_unstemmed | Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture |
| title_short | Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture |
| title_sort | bias switchable dual band inas gasb superlattice detector with pbp architecture |
| topic | Optoelectronic materials nanostructures InAs/GaSb strained layer superlattices (SLS) |
| url | https://ieeexplore.ieee.org/document/5729307/ |
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