Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were...

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Bibliographic Details
Main Authors: E. A. Plis, S. S. Krishna, N. Gautam, S. Myers, S. Krishna
Format: Article
Language:English
Published: IEEE 2011-01-01
Series:IEEE Photonics Journal
Subjects:
Optoelectronic materials
nanostructures
InAs/GaSb strained layer superlattices (SLS)
Online Access:https://ieeexplore.ieee.org/document/5729307/

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