Study of optimization of Al/a-SiC:H Schottky diodes by means of annealing process of a-SiC:H thin films sputtered at three different hydrogen flow rates
The aim of the present work is to study the optimization of the electrical and optical properties of a-SiC:H Schottky di-odes using thermal annealing process to a-SiC:H thin films in the range from 300oC up to 675oC. The films were depos-ited onto c-Si(n) using the rf sputtered method at three diffe...
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| Format: | Article |
| Language: | English |
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Eastern Macedonia and Thrace Institute of Technology
2008-01-01
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| Series: | Journal of Engineering Science and Technology Review |
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| Online Access: | http://www.jestr.org/downloads/volume1/fulltext2.pdf |