Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

Fine pitch Cu/SiO<sub>2</sub> hybrid bonding has been successfully demonstrated at a low temperature of 120 &#xb0;C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bondin...

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Hlavní autoři: Demin Liu, Po-Chih Chen, Tzu-Chieh Chou, Han-Wen Hu, Kuan-Neng Chen
Médium: Článek
Jazyk:English
Vydáno: IEEE 2021-01-01
Edice:IEEE Journal of the Electron Devices Society
Témata:
3D integration
Cu bonding
wafer-level bonding
flip-chip bonding
Au passivation
On-line přístup:https://ieeexplore.ieee.org/document/9546807/

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https://ieeexplore.ieee.org/document/9546807/

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