Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

Fine pitch Cu/SiO<sub>2</sub> hybrid bonding has been successfully demonstrated at a low temperature of 120 &#xb0;C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bondin...

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Xehetasun bibliografikoak
Egile Nagusiak: Demin Liu, Po-Chih Chen, Tzu-Chieh Chou, Han-Wen Hu, Kuan-Neng Chen
Formatua: Artikulua
Hizkuntza:English
Argitaratua: IEEE 2021-01-01
Saila:IEEE Journal of the Electron Devices Society
Gaiak:
3D integration
Cu bonding
wafer-level bonding
flip-chip bonding
Au passivation
Sarrera elektronikoa:https://ieeexplore.ieee.org/document/9546807/

Internet

https://ieeexplore.ieee.org/document/9546807/

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