Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation
Fine pitch Cu/SiO<sub>2</sub> hybrid bonding has been successfully demonstrated at a low temperature of 120 °C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bondin...
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Alt |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
IEEE
2021-01-01
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| Sraith: | IEEE Journal of the Electron Devices Society |
| Ábhair: | |
| Rochtain ar líne: | https://ieeexplore.ieee.org/document/9546807/ |