Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation
Fine pitch Cu/SiO<sub>2</sub> hybrid bonding has been successfully demonstrated at a low temperature of 120 °C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bondin...
| Principais autores: | , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
IEEE
2021-01-01
|
| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9546807/ |