Jiang, S., Li, Y., Chen, Z., Zhu, W., Wu, Q., He, H., & Wang, X. (2022). The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC. AIP Publishing LLC.
Citace podle Chicago (17th ed.)Jiang, Shangting, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, a Xinlin Wang. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.
Citace podle MLA (9th ed.)Jiang, Shangting, et al. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.
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