Παραπομπή σε μορφή APA (7η εκδ.)

Jiang, S., Li, Y., Chen, Z., Zhu, W., Wu, Q., He, H., & Wang, X. (2022). The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC. AIP Publishing LLC.

Παραπομπή σε μορφή Chicago (17η εκδ.)

Jiang, Shangting, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, και Xinlin Wang. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.

Παραπομπή σε μορφή MLA (9th εκδ.)

Jiang, Shangting, et al. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.