Style de citation APA (7e éd.)

Jiang, S., Li, Y., Chen, Z., Zhu, W., Wu, Q., He, H., & Wang, X. (2022). The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC. AIP Publishing LLC.

Style de citation Chicago (17e éd.)

Jiang, Shangting, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, et Xinlin Wang. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.

Style de citation MLA (9e éd.)

Jiang, Shangting, et al. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.