Jiang, S., Li, Y., Chen, Z., Zhu, W., Wu, Q., He, H., & Wang, X. (2022). The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC. AIP Publishing LLC.
Citação do estilo Chicago (17ª ed.)Jiang, Shangting, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, e Xinlin Wang. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.
Citação MLA (9ª ed.)Jiang, Shangting, et al. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.