APA引文

Jiang, S., Li, Y., Chen, Z., Zhu, W., Wu, Q., He, H., & Wang, X. (2022). The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC. AIP Publishing LLC.

Chicago Style (17th ed.) Citation

Jiang, Shangting, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, and Xinlin Wang. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.

MLA引文

Jiang, Shangting, et al. The Effects of Defects on the Defect Formation Energy, Electronic Band Structure, and Electron Mobility in 4H–SiC. AIP Publishing LLC, 2022.