The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H–SiC). The vacancy defect formation energy is smaller than the interstitial d...

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Podrobná bibliografie
Hlavní autoři: Shangting Jiang, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, Xinlin Wang
Médium: Článek
Jazyk:English
Vydáno: AIP Publishing LLC 2022-06-01
Edice:AIP Advances
On-line přístup:http://dx.doi.org/10.1063/5.0095061

Internet

http://dx.doi.org/10.1063/5.0095061

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