The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H–SiC). The vacancy defect formation energy is smaller than the interstitial d...

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Bibliografiske detaljer
Main Authors: Shangting Jiang, Ye Li, Zhiyong Chen, Weihua Zhu, Qinmao Wu, Hongyu He, Xinlin Wang
Format: Article
Sprog:English
Udgivet: AIP Publishing LLC 2022-06-01
Serier:AIP Advances
Online adgang:http://dx.doi.org/10.1063/5.0095061

Internet

http://dx.doi.org/10.1063/5.0095061

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