The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC
With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H–SiC). The vacancy defect formation energy is smaller than the interstitial d...
| Հիմնական հեղինակներ: | , , , , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
AIP Publishing LLC
2022-06-01
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| Շարք: | AIP Advances |
| Առցանց հասանելիություն: | http://dx.doi.org/10.1063/5.0095061 |