The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC
With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H–SiC). The vacancy defect formation energy is smaller than the interstitial d...
| Главные авторы: | , , , , , , |
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| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
AIP Publishing LLC
2022-06-01
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| Серии: | AIP Advances |
| Online-ссылка: | http://dx.doi.org/10.1063/5.0095061 |