Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride
Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thr...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0083664 |
| _version_ | 1818487125517008896 |
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| author | Michael Tripepi Simin Zhang Brandon Harris Noah Talisa Jae-Hyuck Yoo Hartwin Peelaers Selim Elhadj Enam Chowdhury |
| author_facet | Michael Tripepi Simin Zhang Brandon Harris Noah Talisa Jae-Hyuck Yoo Hartwin Peelaers Selim Elhadj Enam Chowdhury |
| author_sort | Michael Tripepi |
| collection | DOAJ |
| description | Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga2O3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga2O3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface. |
| first_indexed | 2024-12-10T16:33:10Z |
| format | Article |
| id | doaj.art-b52c3029bb424152a46ab8054c691233 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-10T16:33:10Z |
| publishDate | 2022-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-b52c3029bb424152a46ab8054c6912332022-12-22T01:41:30ZengAIP Publishing LLCAPL Materials2166-532X2022-07-01107071107071107-910.1063/5.0083664Few-cycle optical field breakdown and damage of gallium oxide and gallium nitrideMichael Tripepi0Simin Zhang1Brandon Harris2Noah Talisa3Jae-Hyuck Yoo4Hartwin Peelaers5Selim Elhadj6Enam Chowdhury7Department of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USAApplied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, USALawrence Livermore National Laboratory, Livermore, California 94550, USADepartment of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, USASeurat Technologies, Wilmington, Massachusetts 01887, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USABoth gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga2O3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga2O3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.http://dx.doi.org/10.1063/5.0083664 |
| spellingShingle | Michael Tripepi Simin Zhang Brandon Harris Noah Talisa Jae-Hyuck Yoo Hartwin Peelaers Selim Elhadj Enam Chowdhury Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride APL Materials |
| title | Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| title_full | Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| title_fullStr | Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| title_full_unstemmed | Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| title_short | Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| title_sort | few cycle optical field breakdown and damage of gallium oxide and gallium nitride |
| url | http://dx.doi.org/10.1063/5.0083664 |
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