Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of th...
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Bibliographic Details
| Main Authors: |
R. Alcotte,
M. Martin,
J. Moeyaert,
R. Cipro,
S. David,
F. Bassani,
F. Ducroquet,
Y. Bogumilowicz,
E. Sanchez,
Z. Ye,
X. Y. Bao,
J. B. Pin,
T. Baron |
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| Format: | Article
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| Language: | English |
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| Published: |
AIP Publishing LLC
2016-04-01
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| Series: | APL Materials
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| Online Access: | http://dx.doi.org/10.1063/1.4945586
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