Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of th...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-04-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4945586 |
| _version_ | 1818063175181926400 |
|---|---|
| author | R. Alcotte M. Martin J. Moeyaert R. Cipro S. David F. Bassani F. Ducroquet Y. Bogumilowicz E. Sanchez Z. Ye X. Y. Bao J. B. Pin T. Baron |
| author_facet | R. Alcotte M. Martin J. Moeyaert R. Cipro S. David F. Bassani F. Ducroquet Y. Bogumilowicz E. Sanchez Z. Ye X. Y. Bao J. B. Pin T. Baron |
| author_sort | R. Alcotte |
| collection | DOAJ |
| description | Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment. |
| first_indexed | 2024-12-10T14:15:55Z |
| format | Article |
| id | doaj.art-b57d9be9181d480fb9c632881acc3157 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-10T14:15:55Z |
| publishDate | 2016-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-b57d9be9181d480fb9c632881acc31572022-12-22T01:45:20ZengAIP Publishing LLCAPL Materials2166-532X2016-04-0144046101046101-610.1063/1.4945586001604APMEpitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobilityR. Alcotte0M. Martin1J. Moeyaert2R. Cipro3S. David4F. Bassani5F. Ducroquet6Y. Bogumilowicz7E. Sanchez8Z. Ye9X. Y. Bao10J. B. Pin11T. Baron12Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceUniv. Grenoble Alpes, IMEP-LAHC, F-38000 Grenoble, France and CNRS, IMEP-LAHC, F-38000 Grenoble, FranceUniv. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, FranceApplied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USAApplied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USAApplied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USAApplied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USAUniv. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, FranceMetal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.http://dx.doi.org/10.1063/1.4945586 |
| spellingShingle | R. Alcotte M. Martin J. Moeyaert R. Cipro S. David F. Bassani F. Ducroquet Y. Bogumilowicz E. Sanchez Z. Ye X. Y. Bao J. B. Pin T. Baron Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility APL Materials |
| title | Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility |
| title_full | Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility |
| title_fullStr | Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility |
| title_full_unstemmed | Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility |
| title_short | Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility |
| title_sort | epitaxial growth of antiphase boundary free gaas layer on 300 mm si 001 substrate by metalorganic chemical vapour deposition with high mobility |
| url | http://dx.doi.org/10.1063/1.4945586 |
| work_keys_str_mv | AT ralcotte epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT mmartin epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT jmoeyaert epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT rcipro epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT sdavid epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT fbassani epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT fducroquet epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT ybogumilowicz epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT esanchez epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT zye epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT xybao epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT jbpin epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility AT tbaron epitaxialgrowthofantiphaseboundaryfreegaaslayeron300mmsi001substratebymetalorganicchemicalvapourdepositionwithhighmobility |