Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of th...
Main Authors: | R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sanchez, Z. Ye, X. Y. Bao, J. B. Pin, T. Baron |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2016-04-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/1.4945586 |
Similar Items
-
Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
by: Joyce, H, et al.
Published: (2006) -
Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
by: Watkins, S, et al.
Published: (2000) -
GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
by: Chidley, E, et al.
Published: (1989) -
Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers
by: H. Mehdi, et al.
Published: (2020-12-01) -
Self-organization of nanoneedles in Fe/GaAs (001) epitaxial thin film
by: Huang, Y, et al.
Published: (2006)