An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation

An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation

In-memory computing (IMC) has been widely accepted to be an effective method to improve energy efficiency. To realize IMC, operands in static random-access memory (SRAM) are stored in columns, which contradicts SRAM write patterns and requires additional data movement. In this paper, an 8T SRAM arra...

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Bibliographic Details
Main Authors: Jin Zhang, Zhiting Lin, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao, Junning Chen
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
ternary multiplication
unsigned multibit multiplication
logic operation
in-memory computing (IMC)
unidirectional charging and discharging
Online Access:https://www.mdpi.com/2079-9292/10/3/300

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