Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD simulation. Unlike certain previous studies, in which...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8430529/ |
| _version_ | 1818419620209491968 |
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| author | Pavlo Bidenko Subin Lee Jae-Hoon Han Jin Dong Song Sang-Hyeon Kim |
| author_facet | Pavlo Bidenko Subin Lee Jae-Hoon Han Jin Dong Song Sang-Hyeon Kim |
| author_sort | Pavlo Bidenko |
| collection | DOAJ |
| description | In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD simulation. Unlike certain previous studies, in which the desired operation conditions were received for specific structures and materials, this study presents for the first time a general approach for matching arbitrary MOSFETs with various ferroelectric (FE) materials. This study shows that depending on the initial capacitance matching which represents the best possible subthreshold slope for the preliminary chosen base structure and FE material, any further optimization process can be different. Additionally, for the first time, FE materials were grouped with respect to the shape of their C-V curves in the NC region. This paper shows that with respect to the base structure, certain types of FEs are more preferable to obtain the sub-kT/q operation in a non-hysteretic manner for the wide band of applied voltages. In addition, the impacts of various parameters including the depletion capacitance, supply voltage, gate oxide capacitance, buried oxide capacitance on the capacitance matching were systematically investigated. |
| first_indexed | 2024-12-14T12:41:28Z |
| format | Article |
| id | doaj.art-b59a1150fbe1447baa41a122196fcc69 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T12:41:28Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-b59a1150fbe1447baa41a122196fcc692022-12-21T23:00:54ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01691092110.1109/JEDS.2018.28645938430529Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance MatchingPavlo Bidenko0https://orcid.org/0000-0002-4999-8911Subin Lee1Jae-Hoon Han2Jin Dong Song3Sang-Hyeon Kim4https://orcid.org/0000-0002-2517-4408Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaIn this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD simulation. Unlike certain previous studies, in which the desired operation conditions were received for specific structures and materials, this study presents for the first time a general approach for matching arbitrary MOSFETs with various ferroelectric (FE) materials. This study shows that depending on the initial capacitance matching which represents the best possible subthreshold slope for the preliminary chosen base structure and FE material, any further optimization process can be different. Additionally, for the first time, FE materials were grouped with respect to the shape of their C-V curves in the NC region. This paper shows that with respect to the base structure, certain types of FEs are more preferable to obtain the sub-kT/q operation in a non-hysteretic manner for the wide band of applied voltages. In addition, the impacts of various parameters including the depletion capacitance, supply voltage, gate oxide capacitance, buried oxide capacitance on the capacitance matching were systematically investigated.https://ieeexplore.ieee.org/document/8430529/Negative capacitanceNCFETscapacitance matchingnon-hystereticLandau-Khalatnikov equation |
| spellingShingle | Pavlo Bidenko Subin Lee Jae-Hoon Han Jin Dong Song Sang-Hyeon Kim Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching IEEE Journal of the Electron Devices Society Negative capacitance NCFETs capacitance matching non-hysteretic Landau-Khalatnikov equation |
| title | Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching |
| title_full | Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching |
| title_fullStr | Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching |
| title_full_unstemmed | Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching |
| title_short | Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching |
| title_sort | simulation study on the design of sub inline formula tex math notation latex kt q tex math inline formula non hysteretic negative capacitance fet using capacitance matching |
| topic | Negative capacitance NCFETs capacitance matching non-hysteretic Landau-Khalatnikov equation |
| url | https://ieeexplore.ieee.org/document/8430529/ |
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