An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs
This paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power d...
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| Format: | Article |
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MDPI AG
2020-10-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/20/7192 |
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| author | Yinong Zeng Yingping Yi Pu Liu |
| author_facet | Yinong Zeng Yingping Yi Pu Liu |
| author_sort | Yinong Zeng |
| collection | DOAJ |
| description | This paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power devices and the stray inductances of the Printed Circuit Board (PCB) traces into consideration. The state equations derived from the equivalent circuit of each stage is solved by iteration to calculate the loss in the switching transients. In order to study the temperature characteristic completely, the key parameters needed in the calculation are extracted from power device test platform based on Agilent B1505A. The loss assessment of the proposed analytical model with varied elements has been successfully substantiated by the experimental results of a 400-V, 15-A double-pulse-test bench. Finally, some practical knowledge about loss mechanisms is given to help estimate the power losses and optimize the efficiency of power converters. |
| first_indexed | 2024-03-10T15:36:45Z |
| format | Article |
| id | doaj.art-b59d17dd7ed64c9587b03d238cd194d7 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T15:36:45Z |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-b59d17dd7ed64c9587b03d238cd194d72023-11-20T17:12:23ZengMDPI AGApplied Sciences2076-34172020-10-011020719210.3390/app10207192An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETsYinong Zeng0Yingping Yi1Pu Liu2Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200082, ChinaDepartment of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200082, ChinaCollege of Electrical and Information Engineering, Zhengzhou University of Light Industry, Henan 450000, ChinaThis paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power devices and the stray inductances of the Printed Circuit Board (PCB) traces into consideration. The state equations derived from the equivalent circuit of each stage is solved by iteration to calculate the loss in the switching transients. In order to study the temperature characteristic completely, the key parameters needed in the calculation are extracted from power device test platform based on Agilent B1505A. The loss assessment of the proposed analytical model with varied elements has been successfully substantiated by the experimental results of a 400-V, 15-A double-pulse-test bench. Finally, some practical knowledge about loss mechanisms is given to help estimate the power losses and optimize the efficiency of power converters.https://www.mdpi.com/2076-3417/10/20/7192silicon carbideMOSFETparasitic elementspower losses |
| spellingShingle | Yinong Zeng Yingping Yi Pu Liu An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs Applied Sciences silicon carbide MOSFET parasitic elements power losses |
| title | An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs |
| title_full | An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs |
| title_fullStr | An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs |
| title_full_unstemmed | An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs |
| title_short | An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs |
| title_sort | improved investigation into the effects of the temperature dependent parasitic elements on the losses of sic mosfets |
| topic | silicon carbide MOSFET parasitic elements power losses |
| url | https://www.mdpi.com/2076-3417/10/20/7192 |
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