The interface of epitaxial nanographene on GaN by PECVD
It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5111443 |
| _version_ | 1818321515010064384 |
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| author | Zongyao Li Yu Xu Bing Cao Lin Qi En Zhao Song Yang Chinhua Wang Jianfeng Wang Guangyu Zhang Ke Xu |
| author_facet | Zongyao Li Yu Xu Bing Cao Lin Qi En Zhao Song Yang Chinhua Wang Jianfeng Wang Guangyu Zhang Ke Xu |
| author_sort | Zongyao Li |
| collection | DOAJ |
| description | It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices. |
| first_indexed | 2024-12-13T10:42:07Z |
| format | Article |
| id | doaj.art-b5b147cd5d8e402997e19b07b089da27 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T10:42:07Z |
| publishDate | 2019-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b5b147cd5d8e402997e19b07b089da272022-12-21T23:50:27ZengAIP Publishing LLCAIP Advances2158-32262019-09-0199095060095060-510.1063/1.5111443084909ADVThe interface of epitaxial nanographene on GaN by PECVDZongyao Li0Yu Xu1Bing Cao2Lin Qi3En Zhao4Song Yang5Chinhua Wang6Jianfeng Wang7Guangyu Zhang8Ke Xu9School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. ChinaSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. ChinaIt is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices.http://dx.doi.org/10.1063/1.5111443 |
| spellingShingle | Zongyao Li Yu Xu Bing Cao Lin Qi En Zhao Song Yang Chinhua Wang Jianfeng Wang Guangyu Zhang Ke Xu The interface of epitaxial nanographene on GaN by PECVD AIP Advances |
| title | The interface of epitaxial nanographene on GaN by PECVD |
| title_full | The interface of epitaxial nanographene on GaN by PECVD |
| title_fullStr | The interface of epitaxial nanographene on GaN by PECVD |
| title_full_unstemmed | The interface of epitaxial nanographene on GaN by PECVD |
| title_short | The interface of epitaxial nanographene on GaN by PECVD |
| title_sort | interface of epitaxial nanographene on gan by pecvd |
| url | http://dx.doi.org/10.1063/1.5111443 |
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