Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Abstract SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxid...
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Nature Portfolio
2024-02-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-024-53845-z |
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| author | Ioana Dascalescu Catalin Palade Adrian Slav Ionel Stavarache Ovidiu Cojocaru Valentin Serban Teodorescu Valentin-Adrian Maraloiu Ana-Maria Lepadatu Magdalena Lidia Ciurea Toma Stoica |
| author_facet | Ioana Dascalescu Catalin Palade Adrian Slav Ionel Stavarache Ovidiu Cojocaru Valentin Serban Teodorescu Valentin-Adrian Maraloiu Ana-Maria Lepadatu Magdalena Lidia Ciurea Toma Stoica |
| author_sort | Ioana Dascalescu |
| collection | DOAJ |
| description | Abstract SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxide (HfO2) matrix fabricated by using magnetron co-sputtering deposition at room temperature and rapid thermal annealing (RTA). The NCs were formed at temperatures in the range of 500–800 °C. RTA was performed to obtain SiGeSn NCs with surfaces passivated by the embedding HfO2 matrix. The formation of NCs and β-Sn segregation were discussed in relation to the deposition and processing conditions by employing HRTEM, XRD and Raman spectroscopy studies. The spectral photosensitivity exhibited up to 2000 nm in short-wavelength infrared (SWIR) depending on the Sn composition was obtained. Comparing to similar results on GeSn NCs in SiO2 matrix, the addition of Si offers a better thermal stability of SiGeSn NCs, while the use of HfO2 matrix results in better passivation of NCs increasing the SWIR photosensitivity at room temperature. These results suggest that SiGeSn NCs embedded in an HfO2 matrix are a promising material for SWIR optoelectronic devices. |
| first_indexed | 2024-03-07T15:02:38Z |
| format | Article |
| id | doaj.art-b5b9061060d04fdda2babc0411e23920 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-07T15:02:38Z |
| publishDate | 2024-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-b5b9061060d04fdda2babc0411e239202024-03-05T19:04:50ZengNature PortfolioScientific Reports2045-23222024-02-0114111110.1038/s41598-024-53845-zEnhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrixIoana Dascalescu0Catalin Palade1Adrian Slav2Ionel Stavarache3Ovidiu Cojocaru4Valentin Serban Teodorescu5Valentin-Adrian Maraloiu6Ana-Maria Lepadatu7Magdalena Lidia Ciurea8Toma Stoica9National Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsNational Institute of Materials PhysicsAbstract SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxide (HfO2) matrix fabricated by using magnetron co-sputtering deposition at room temperature and rapid thermal annealing (RTA). The NCs were formed at temperatures in the range of 500–800 °C. RTA was performed to obtain SiGeSn NCs with surfaces passivated by the embedding HfO2 matrix. The formation of NCs and β-Sn segregation were discussed in relation to the deposition and processing conditions by employing HRTEM, XRD and Raman spectroscopy studies. The spectral photosensitivity exhibited up to 2000 nm in short-wavelength infrared (SWIR) depending on the Sn composition was obtained. Comparing to similar results on GeSn NCs in SiO2 matrix, the addition of Si offers a better thermal stability of SiGeSn NCs, while the use of HfO2 matrix results in better passivation of NCs increasing the SWIR photosensitivity at room temperature. These results suggest that SiGeSn NCs embedded in an HfO2 matrix are a promising material for SWIR optoelectronic devices.https://doi.org/10.1038/s41598-024-53845-zGroup IV alloysHfO2SiGeSn nanocrystalsMagnetron sputteringSWIRSpectral photocurrent |
| spellingShingle | Ioana Dascalescu Catalin Palade Adrian Slav Ionel Stavarache Ovidiu Cojocaru Valentin Serban Teodorescu Valentin-Adrian Maraloiu Ana-Maria Lepadatu Magdalena Lidia Ciurea Toma Stoica Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix Scientific Reports Group IV alloys HfO2 SiGeSn nanocrystals Magnetron sputtering SWIR Spectral photocurrent |
| title | Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix |
| title_full | Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix |
| title_fullStr | Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix |
| title_full_unstemmed | Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix |
| title_short | Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix |
| title_sort | enhancing sigesn nanocrystals swir photosensing by high passivation in nanocrystalline hfo2 matrix |
| topic | Group IV alloys HfO2 SiGeSn nanocrystals Magnetron sputtering SWIR Spectral photocurrent |
| url | https://doi.org/10.1038/s41598-024-53845-z |
| work_keys_str_mv | AT ioanadascalescu enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT catalinpalade enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT adrianslav enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT ionelstavarache enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT ovidiucojocaru enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT valentinserbanteodorescu enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT valentinadrianmaraloiu enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT anamarialepadatu enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT magdalenalidiaciurea enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix AT tomastoica enhancingsigesnnanocrystalsswirphotosensingbyhighpassivationinnanocrystallinehfo2matrix |