Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphe...

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Bibliographic Details
Main Authors: Yibo Dong, Yiyang Xie, Chen Xu, Xuejian Li, Jun Deng, Xing Fan, Guanzhong Pan, Qiuhua Wang, Fangzhu Xiong, Yafei Fu, Jie Sun
Format: Article
Language:English
Published: AIP Publishing LLC 2018-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4992077
Description
Summary:A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene “lands onto” SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
ISSN:2166-532X

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