SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
In this study, we fabricate a Pt/TiN/SnO<sub>x</sub>/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO<sub>2</sub>, acts as an oxygen vacancy reservoir, aiding...
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| Format: | Article |
| Jezik: | English |
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MDPI AG
2023-09-01
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| Serija: | Nanomaterials |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2079-4991/13/18/2603 |
| _version_ | 1827724939072897024 |
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| author | Muhammad Ismail Chandreswar Mahata Myounggon Kang Sungjun Kim |
| author_facet | Muhammad Ismail Chandreswar Mahata Myounggon Kang Sungjun Kim |
| author_sort | Muhammad Ismail |
| collection | DOAJ |
| description | In this study, we fabricate a Pt/TiN/SnO<sub>x</sub>/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO<sub>2</sub>, acts as an oxygen vacancy reservoir, aiding the creation of conductive filaments in the switching layer. Our SnO<sub>x</sub>-based device exhibits remarkable endurance, with over 200 DC cycles, ON/FFO ratio (>20), and 10<sup>4</sup> s retention. Set and reset voltage variabilities are impressively low, at 9.89% and 3.2%, respectively. Controlled negative reset voltage and compliance current yield reliable multilevel resistance states, mimicking synaptic behaviors. The memory device faithfully emulates key neuromorphic characteristics, encompassing both long-term potentiation (LTP) and long-term depression (LTD). The filamentary switching mechanism in the SnO<sub>x</sub>-based memory device is explained by an oxygen vacancy concentration gradient, where current transport shifts from Ohmic to Schottky emission dominance across different resistance states. These findings exemplify the potential of SnO<sub>x</sub>-based devices for high-density data storage memory and revolutionary neuromorphic computing applications. |
| first_indexed | 2024-03-10T22:21:35Z |
| format | Article |
| id | doaj.art-b5e18a4065044ffea31074394c4975e1 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T22:21:35Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-b5e18a4065044ffea31074394c4975e12023-11-19T12:15:23ZengMDPI AGNanomaterials2079-49912023-09-011318260310.3390/nano13182603SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and ComputingMuhammad Ismail0Chandreswar Mahata1Myounggon Kang2Sungjun Kim3Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Electronics Engineering, Korea National University of Transportation, Chungju-si 27469, Republic of KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaIn this study, we fabricate a Pt/TiN/SnO<sub>x</sub>/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO<sub>2</sub>, acts as an oxygen vacancy reservoir, aiding the creation of conductive filaments in the switching layer. Our SnO<sub>x</sub>-based device exhibits remarkable endurance, with over 200 DC cycles, ON/FFO ratio (>20), and 10<sup>4</sup> s retention. Set and reset voltage variabilities are impressively low, at 9.89% and 3.2%, respectively. Controlled negative reset voltage and compliance current yield reliable multilevel resistance states, mimicking synaptic behaviors. The memory device faithfully emulates key neuromorphic characteristics, encompassing both long-term potentiation (LTP) and long-term depression (LTD). The filamentary switching mechanism in the SnO<sub>x</sub>-based memory device is explained by an oxygen vacancy concentration gradient, where current transport shifts from Ohmic to Schottky emission dominance across different resistance states. These findings exemplify the potential of SnO<sub>x</sub>-based devices for high-density data storage memory and revolutionary neuromorphic computing applications.https://www.mdpi.com/2079-4991/13/18/2603tin oxideresistive switchingmultilevel resistance statesSchottky emissionneuromorphic system |
| spellingShingle | Muhammad Ismail Chandreswar Mahata Myounggon Kang Sungjun Kim SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing Nanomaterials tin oxide resistive switching multilevel resistance states Schottky emission neuromorphic system |
| title | SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing |
| title_full | SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing |
| title_fullStr | SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing |
| title_full_unstemmed | SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing |
| title_short | SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing |
| title_sort | sno sub 2 sub based memory device with filamentary switching mechanism for advanced data storage and computing |
| topic | tin oxide resistive switching multilevel resistance states Schottky emission neuromorphic system |
| url | https://www.mdpi.com/2079-4991/13/18/2603 |
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