SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

In this study, we fabricate a Pt/TiN/SnO<sub>x</sub>/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO<sub>2</sub>, acts as an oxygen vacancy reservoir, aiding...

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Bibliographic Details
Main Authors: Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Nanomaterials
Subjects:
tin oxide
resistive switching
multilevel resistance states
Schottky emission
neuromorphic system
Online Access:https://www.mdpi.com/2079-4991/13/18/2603

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