An ab initio study on resistance switching in hexagonal boron nitride
Abstract Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching in hexagonal boron nitride (h-BN) has been demons...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2022-09-01
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Series: | npj 2D Materials and Applications |
Online Access: | https://doi.org/10.1038/s41699-022-00340-6 |