An ab initio study on resistance switching in hexagonal boron nitride

An ab initio study on resistance switching in hexagonal boron nitride

Abstract Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching in hexagonal boron nitride (h-BN) has been demons...

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Bibliographic Details
Main Authors: Fabian Ducry, Dominic Waldhoer, Theresia Knobloch, Miklos Csontos, Nadia Jimenez Olalla, Juerg Leuthold, Tibor Grasser, Mathieu Luisier
Format: Article
Language:English
Published: Nature Portfolio 2022-09-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-022-00340-6

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