Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides
In this paper, we consider the effect of porous silicon and dysprosium fluoride films on the current-voltage characteristics of low-dimensional photosensitive structures based on silicon. The processes of creating and studying the resulting photosensitive structures are described. The current-voltag...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2022-12-01
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| Series: | Физика волновых процессов и радиотехнические системы |
| Subjects: | |
| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/10924/9316 |
| _version_ | 1797382595570302976 |
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| author | Natalia А. Poluektova Daria А. Shishkina Alexander N. Bazanov Roman A. Perebalin Ivan A. Shishkin Natalya V. Latukhina Galina A. Rogozhina |
| author_facet | Natalia А. Poluektova Daria А. Shishkina Alexander N. Bazanov Roman A. Perebalin Ivan A. Shishkin Natalya V. Latukhina Galina A. Rogozhina |
| author_sort | Natalia А. Poluektova |
| collection | DOAJ |
| description | In this paper, we consider the effect of porous silicon and dysprosium fluoride films on the current-voltage characteristics of low-dimensional photosensitive structures based on silicon. The processes of creating and studying the resulting photosensitive structures are described. The current-voltage characteristics of the structures before and after coating are given. The study found a positive effect of porous silicon and dysprosium fluoride coating on the current-voltage characteristics of structures both with and without porous silicon. Values of the optimal thickness of the dysprosium fluoride coating for porous photosensitive structures are obtained. It is shown that dysprosium fluoride coatings do not always have a positive effect on such parameters of photosensitive structures as short-circuit current and open-circuit voltage, since this is due to the non-uniformity of film deposition on the surface of the structure. |
| first_indexed | 2024-03-08T21:07:48Z |
| format | Article |
| id | doaj.art-b5f2f240a80a48b2b7081b2e86fb3004 |
| institution | Directory Open Access Journal |
| issn | 1810-3189 2782-294X |
| language | English |
| last_indexed | 2024-03-08T21:07:48Z |
| publishDate | 2022-12-01 |
| publisher | Povolzhskiy State University of Telecommunications & Informatics |
| record_format | Article |
| series | Физика волновых процессов и радиотехнические системы |
| spelling | doaj.art-b5f2f240a80a48b2b7081b2e86fb30042023-12-22T10:31:41ZengPovolzhskiy State University of Telecommunications & InformaticsФизика волновых процессов и радиотехнические системы1810-31892782-294X2022-12-01254677310.18469/1810-3189.2022.25.4.67-738774Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluoridesNatalia А. Poluektova0https://orcid.org/0000-0003-4189-6192Daria А. Shishkina1https://orcid.org/0000-0003-4118-1429Alexander N. Bazanov2Roman A. Perebalin3Ivan A. Shishkin4Natalya V. Latukhina5https://orcid.org/0000-0003-2651-0562Galina A. Rogozhina6Samara National Research UniversitySamara National Research UniversitySamara National Research UniversitySamara National Research UniversitySamara National Research UniversitySamara National Research UniversitySamara National Research UniversityIn this paper, we consider the effect of porous silicon and dysprosium fluoride films on the current-voltage characteristics of low-dimensional photosensitive structures based on silicon. The processes of creating and studying the resulting photosensitive structures are described. The current-voltage characteristics of the structures before and after coating are given. The study found a positive effect of porous silicon and dysprosium fluoride coating on the current-voltage characteristics of structures both with and without porous silicon. Values of the optimal thickness of the dysprosium fluoride coating for porous photosensitive structures are obtained. It is shown that dysprosium fluoride coatings do not always have a positive effect on such parameters of photosensitive structures as short-circuit current and open-circuit voltage, since this is due to the non-uniformity of film deposition on the surface of the structure.https://journals.ssau.ru/pwp/article/viewFile/10924/9316photosensitive structuresporous silicondysprosium fluoride |
| spellingShingle | Natalia А. Poluektova Daria А. Shishkina Alexander N. Bazanov Roman A. Perebalin Ivan A. Shishkin Natalya V. Latukhina Galina A. Rogozhina Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides Физика волновых процессов и радиотехнические системы photosensitive structures porous silicon dysprosium fluoride |
| title | Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| title_full | Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| title_fullStr | Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| title_full_unstemmed | Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| title_short | Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| title_sort | investigation of electrical properties of photosensitive structures of reduced dimension based on silicon coated with rare earth fluorides |
| topic | photosensitive structures porous silicon dysprosium fluoride |
| url | https://journals.ssau.ru/pwp/article/viewFile/10924/9316 |
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