Research progress in flexible resistive random access memory materials

The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as broad trends and recent researches of flexible RR...

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Bibliographic Details
Main Authors: TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei
Format: Article
Language:zho
Published: Journal of Materials Engineering 2020-07-01
Series:Cailiao gongcheng
Subjects:
Online Access:http://jme.biam.ac.cn/CN/Y2020/V48/I7/81

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