Research progress in flexible resistive random access memory materials
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as broad trends and recent researches of flexible RR...
Main Authors: | TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei |
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Format: | Article |
Language: | zho |
Published: |
Journal of Materials Engineering
2020-07-01
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Series: | Cailiao gongcheng |
Subjects: | |
Online Access: | http://jme.biam.ac.cn/CN/Y2020/V48/I7/81 |
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