Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing
Abstract A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-12-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-48936-2 |
| _version_ | 1797388427536105472 |
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| author | Kripasindhu Karmakar Arpita Roy Subhendu Dhibar Shantanu Majumder Subham Bhattacharjee S. K. Mehebub Rahaman Ratnakar Saha Priyajit Chatterjee Soumya Jyoti Ray Bidyut Saha |
| author_facet | Kripasindhu Karmakar Arpita Roy Subhendu Dhibar Shantanu Majumder Subham Bhattacharjee S. K. Mehebub Rahaman Ratnakar Saha Priyajit Chatterjee Soumya Jyoti Ray Bidyut Saha |
| author_sort | Kripasindhu Karmakar |
| collection | DOAJ |
| description | Abstract A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The nano-rose like morphological patterns of Mg(II)-metallohydrogel are characterized through field emission scanning electron microscopic study. The energy dispersive X-ray elemental mapping analysis confirms the primary gel forming elements of Mg(II)-metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic study. In this work, magnesium(II) metallohydrogel (Mg@TMA) based metal–semiconductor-metal structures have been developed and charge transport behaviour is studied. Here, it is confirmed that the magnesium(II) metallohydrogel (Mg@TMA) based resistive random access memory (RRAM) device is showing bipolar resistive switching behaviour at room temperature. We have also explored the mechanism of resistive switching behaviour using the formation (rupture) of conductive filaments between the metal electrodes. This RRAM devices exhibit excellent switching endurance over 10,000 switching cycles with a large ON/OFF ratio (~ 100). The easy fabrication techniques, robust resistive switching behaviour and stability of the present system makes these structures preferred candidate for applications in non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics etc. |
| first_indexed | 2024-03-08T22:40:42Z |
| format | Article |
| id | doaj.art-b6a6abe2c08b48278f19de28b2370366 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-08T22:40:42Z |
| publishDate | 2023-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-b6a6abe2c08b48278f19de28b23703662023-12-17T12:12:47ZengNature PortfolioScientific Reports2045-23222023-12-0113111610.1038/s41598-023-48936-2Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computingKripasindhu Karmakar0Arpita Roy1Subhendu Dhibar2Shantanu Majumder3Subham Bhattacharjee4S. K. Mehebub Rahaman5Ratnakar Saha6Priyajit Chatterjee7Soumya Jyoti Ray8Bidyut Saha9Colloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of Technology PatnaColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of Technology PatnaDepartment of Chemistry, Kazi Nazrul UniversityColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagSchool of Chemical Sciences, National Institute of Science Education and Research (NISER)University Science Instrumentation Centre, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of Technology PatnaColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagAbstract A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The nano-rose like morphological patterns of Mg(II)-metallohydrogel are characterized through field emission scanning electron microscopic study. The energy dispersive X-ray elemental mapping analysis confirms the primary gel forming elements of Mg(II)-metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic study. In this work, magnesium(II) metallohydrogel (Mg@TMA) based metal–semiconductor-metal structures have been developed and charge transport behaviour is studied. Here, it is confirmed that the magnesium(II) metallohydrogel (Mg@TMA) based resistive random access memory (RRAM) device is showing bipolar resistive switching behaviour at room temperature. We have also explored the mechanism of resistive switching behaviour using the formation (rupture) of conductive filaments between the metal electrodes. This RRAM devices exhibit excellent switching endurance over 10,000 switching cycles with a large ON/OFF ratio (~ 100). The easy fabrication techniques, robust resistive switching behaviour and stability of the present system makes these structures preferred candidate for applications in non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics etc.https://doi.org/10.1038/s41598-023-48936-2 |
| spellingShingle | Kripasindhu Karmakar Arpita Roy Subhendu Dhibar Shantanu Majumder Subham Bhattacharjee S. K. Mehebub Rahaman Ratnakar Saha Priyajit Chatterjee Soumya Jyoti Ray Bidyut Saha Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing Scientific Reports |
| title | Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing |
| title_full | Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing |
| title_fullStr | Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing |
| title_full_unstemmed | Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing |
| title_short | Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing |
| title_sort | exploration of a wide bandgap semiconducting supramolecular mg ii metallohydrogel derived from an aliphatic amine a robust resistive switching framework for brain inspired computing |
| url | https://doi.org/10.1038/s41598-023-48936-2 |
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