Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress
By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The capacitors with strained AlN were fabricated and...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac99c0 |