Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

<p>Abstract</p> <p>The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al<it> <sub>x</sub> </it>Ga<sub>1-<it>x</it> </sub>As quantum well by time-resolved Kerr rotation technique u...

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Bibliographic Details
Main Authors: Zhang Xiuwen, Ye Huiqi, Hu Changcheng, Wang Gang, Zhao Hongming, Tian Haitao, Wang Wenxin, Liu Baoli
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://www.nanoscalereslett.com/content/6/1/520
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Summary:<p>Abstract</p> <p>The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al<it> <sub>x</sub> </it>Ga<sub>1-<it>x</it> </sub>As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective <it>g</it>-factor decrease with increasing temperature.</p> <p> <b>PACS: </b>78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,</p>
ISSN:1931-7573
1556-276X