Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors
A method to extract the pinned photodiode (PPD) physical parameters inside a CMOS image sensor pixel array is presented. The proposed technique is based on the Tan et al. pinning voltage characteristic. This pixel device characterization can be performed directly at the solid-state circuit output wi...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6819767/ |
| _version_ | 1818556863434719232 |
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| author | Vincent Goiffon Magali Estribeau Julien Michelot Paola Cervantes Alice Pelamatti Olivier Marcelot Pierre Magnan |
| author_facet | Vincent Goiffon Magali Estribeau Julien Michelot Paola Cervantes Alice Pelamatti Olivier Marcelot Pierre Magnan |
| author_sort | Vincent Goiffon |
| collection | DOAJ |
| description | A method to extract the pinned photodiode (PPD) physical parameters inside a CMOS image sensor pixel array is presented. The proposed technique is based on the Tan et al. pinning voltage characteristic. This pixel device characterization can be performed directly at the solid-state circuit output without the need of any external test structure. The presented study analyzes the different injection mechanisms involved in the different regimes of the characteristic. It is demonstrated that in addition to the pinning voltage, this fast measurement can be used to retrieve the PPD capacitance, the pixel equilibrium full well capacity, and both the transfer gate threshold voltage and its channel potential at a given gate voltage. An alternative approach is also proposed to extract an objective pinning voltage value from this measurement. |
| first_indexed | 2024-12-13T23:52:43Z |
| format | Article |
| id | doaj.art-b6fc7fb3e7e34b9f86e8bc07ee2069a3 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T23:52:43Z |
| publishDate | 2014-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-b6fc7fb3e7e34b9f86e8bc07ee2069a32022-12-21T23:26:43ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-0124657610.1109/JEDS.2014.23262996819767Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image SensorsVincent Goiffon0https://orcid.org/0000-0001-5024-0115Magali Estribeau1Julien Michelot2Paola Cervantes3Alice Pelamatti4Olivier Marcelot5Pierre Magnan6Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, FranceInstitut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, France Pyxalis, Grenoble, FranceInstitut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, FranceInstitut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, FranceInstitut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, FranceInstitut Supérieur de l'Aéronautique et de l'Espace (ISAE), Université de Toulouse, Image Sensor Research Team, Toulouse, FranceA method to extract the pinned photodiode (PPD) physical parameters inside a CMOS image sensor pixel array is presented. The proposed technique is based on the Tan et al. pinning voltage characteristic. This pixel device characterization can be performed directly at the solid-state circuit output without the need of any external test structure. The presented study analyzes the different injection mechanisms involved in the different regimes of the characteristic. It is demonstrated that in addition to the pinning voltage, this fast measurement can be used to retrieve the PPD capacitance, the pixel equilibrium full well capacity, and both the transfer gate threshold voltage and its channel potential at a given gate voltage. An alternative approach is also proposed to extract an objective pinning voltage value from this measurement.https://ieeexplore.ieee.org/document/6819767/ |
| spellingShingle | Vincent Goiffon Magali Estribeau Julien Michelot Paola Cervantes Alice Pelamatti Olivier Marcelot Pierre Magnan Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors IEEE Journal of the Electron Devices Society |
| title | Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors |
| title_full | Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors |
| title_fullStr | Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors |
| title_full_unstemmed | Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors |
| title_short | Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors |
| title_sort | pixel level characterization of pinned photodiode and transfer gate physical parameters in cmos image sensors |
| url | https://ieeexplore.ieee.org/document/6819767/ |
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