Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata <italic>et al.</italic>, 2007, Lee <italic>et al.</itali...

Full description

Bibliographic Details
Main Authors: Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
3D NAND flash
QLC
re-program
IVS
LM
Online Access:https://ieeexplore.ieee.org/document/9434406/

Similar Items

Similar Items