First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range

We have demonstrated the wide-field amplitude surface plasmon resonance (SPR) microscopy technique in the terahertz (THz) range. A Zeonex polymer prism was utilized to excite surface plasmon polaritons (SPPs) through attenuated total reflection (ATR) in an Otto configuration. Coherent quasimonochrom...

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Main Authors: Vasiliy Valerievich Gerasimov, Oleg Eduardovich Kameshkov, Alexey Konstantinovich Nikitin, Ildus Shevketovich Khasanov, Alexey Georgievich Lemzyakov, Irina Veniaminovna Antonova, Artem Ilyich Ivanov, Nghiem Thi Ha Lien, Nguyen Trong Nghia, Le Tu Anh, Nguyen Quoc Hung, Ta Thu Trang
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Photonics
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Online Access:https://www.mdpi.com/2304-6732/10/7/723
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author Vasiliy Valerievich Gerasimov
Oleg Eduardovich Kameshkov
Alexey Konstantinovich Nikitin
Ildus Shevketovich Khasanov
Alexey Georgievich Lemzyakov
Irina Veniaminovna Antonova
Artem Ilyich Ivanov
Nghiem Thi Ha Lien
Nguyen Trong Nghia
Le Tu Anh
Nguyen Quoc Hung
Ta Thu Trang
author_facet Vasiliy Valerievich Gerasimov
Oleg Eduardovich Kameshkov
Alexey Konstantinovich Nikitin
Ildus Shevketovich Khasanov
Alexey Georgievich Lemzyakov
Irina Veniaminovna Antonova
Artem Ilyich Ivanov
Nghiem Thi Ha Lien
Nguyen Trong Nghia
Le Tu Anh
Nguyen Quoc Hung
Ta Thu Trang
author_sort Vasiliy Valerievich Gerasimov
collection DOAJ
description We have demonstrated the wide-field amplitude surface plasmon resonance (SPR) microscopy technique in the terahertz (THz) range. A Zeonex polymer prism was utilized to excite surface plasmon polaritons (SPPs) through attenuated total reflection (ATR) in an Otto configuration. Coherent quasimonochromatic radiation with a wavelength of approximately 197 μm, generated by the Novosibirsk free electron laser, was employed. Our results indicate that the SPR microscopy method is applicable for investigating the planar surfaces of semiconductors at THz frequencies, provided that the SPPs’ cutoff frequency is close to the probing radiation frequency. This condition ensures that the propagation length of the SPPs is comparable to the radiation wavelength. By varying the air gap between the prism and the surface under examination, we acquired images of a polypropylene coating 20 µm thick and a graphene coating 35 nm thick on a flat indium antimonide substrate. The boundary between the coated and uncoated regions can be precisely localized through determination of the kink in the reflection coefficient of the THz radiation beam that illuminates the boundary between the regions if the optimal conditions for the generation of the SPPs in the uncoated region are met.
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spelling doaj.art-b73487f56860409eafea3147ef345f2e2023-11-18T20:57:16ZengMDPI AGPhotonics2304-67322023-06-0110772310.3390/photonics10070723First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz RangeVasiliy Valerievich Gerasimov0Oleg Eduardovich Kameshkov1Alexey Konstantinovich Nikitin2Ildus Shevketovich Khasanov3Alexey Georgievich Lemzyakov4Irina Veniaminovna Antonova5Artem Ilyich Ivanov6Nghiem Thi Ha Lien7Nguyen Trong Nghia8Le Tu Anh9Nguyen Quoc Hung10Ta Thu Trang11Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, 11, Lavrentiev Prospect, 630090 Novosibirsk, RussiaBudker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, 11, Lavrentiev Prospect, 630090 Novosibirsk, RussiaScientific and Technological Centre of Unique Instrumentation of RAS, 15, Bytlerova Street, 117342 Moscow, RussiaScientific and Technological Centre of Unique Instrumentation of RAS, 15, Bytlerova Street, 117342 Moscow, RussiaBudker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, 11, Lavrentiev Prospect, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, RussiaInstitute of Physics, Vietnam Academy of Science and Technology, 10, Daotan, Badinh, Hanoi 11935, VietnamInstitute of Physics, Vietnam Academy of Science and Technology, 10, Daotan, Badinh, Hanoi 11935, VietnamVietnam Academy of Science and Technology, University of Science and Technology of Hanoi, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11307, VietnamNano and Energy Center, VNU University of Science, Vietnam National University, 334, Nguyen Trai, Thanh Xuan, Hanoi 11935, VietnamJoint Vietnam-Russia Tropical Science and Technology Research Center, Institute of Tropical Durability, 63 Nguyen Van Huyen, Cau Giay District, Hanoi 11307, VietnamWe have demonstrated the wide-field amplitude surface plasmon resonance (SPR) microscopy technique in the terahertz (THz) range. A Zeonex polymer prism was utilized to excite surface plasmon polaritons (SPPs) through attenuated total reflection (ATR) in an Otto configuration. Coherent quasimonochromatic radiation with a wavelength of approximately 197 μm, generated by the Novosibirsk free electron laser, was employed. Our results indicate that the SPR microscopy method is applicable for investigating the planar surfaces of semiconductors at THz frequencies, provided that the SPPs’ cutoff frequency is close to the probing radiation frequency. This condition ensures that the propagation length of the SPPs is comparable to the radiation wavelength. By varying the air gap between the prism and the surface under examination, we acquired images of a polypropylene coating 20 µm thick and a graphene coating 35 nm thick on a flat indium antimonide substrate. The boundary between the coated and uncoated regions can be precisely localized through determination of the kink in the reflection coefficient of the THz radiation beam that illuminates the boundary between the regions if the optimal conditions for the generation of the SPPs in the uncoated region are met.https://www.mdpi.com/2304-6732/10/7/723surface plasmon polaritonsterahertz microscopyindium antimonidegraphene films
spellingShingle Vasiliy Valerievich Gerasimov
Oleg Eduardovich Kameshkov
Alexey Konstantinovich Nikitin
Ildus Shevketovich Khasanov
Alexey Georgievich Lemzyakov
Irina Veniaminovna Antonova
Artem Ilyich Ivanov
Nghiem Thi Ha Lien
Nguyen Trong Nghia
Le Tu Anh
Nguyen Quoc Hung
Ta Thu Trang
First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
Photonics
surface plasmon polaritons
terahertz microscopy
indium antimonide
graphene films
title First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
title_full First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
title_fullStr First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
title_full_unstemmed First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
title_short First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range
title_sort first experimental demonstration of the wide field amplitude surface plasmon resonance microscopy in the terahertz range
topic surface plasmon polaritons
terahertz microscopy
indium antimonide
graphene films
url https://www.mdpi.com/2304-6732/10/7/723
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