Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition
<p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH<sub>4</sub>/H<sub>2</sub>/B(OCH<sub>3</sub>)<sub>3</sub> gas. The Raman perform...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Kaunas University of Technology
2016-05-01
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| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/12923 |
| Summary: | <p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH<sub>4</sub>/H<sub>2</sub>/B(OCH<sub>3</sub>)<sub>3</sub> gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH<sub>3</sub>)<sub>3</sub> had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH<sub>3</sub>)<sub>3</sub>, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×10<sup>19</sup>cm<sup>-3</sup> to a maximum of 2.4×10<sup>21</sup>cm<sup>-3</sup>, estimated from the Raman spectra.</p><p> </p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12923">http://dx.doi.org/10.5755/j01.ms.22.2.12923</a></p> |
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| ISSN: | 1392-1320 2029-7289 |