Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition
<p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH<sub>4</sub>/H<sub>2</sub>/B(OCH<sub>3</sub>)<sub>3</sub> gas. The Raman perform...
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| Format: | Article |
| Language: | English |
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Kaunas University of Technology
2016-05-01
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| Series: | Medžiagotyra |
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| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/12923 |
| _version_ | 1818263475316588544 |
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| author | Mengmei PAN Hongyan PENG Wanbang ZHAO Hongwei JIANG |
| author_facet | Mengmei PAN Hongyan PENG Wanbang ZHAO Hongwei JIANG |
| author_sort | Mengmei PAN |
| collection | DOAJ |
| description | <p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH<sub>4</sub>/H<sub>2</sub>/B(OCH<sub>3</sub>)<sub>3</sub> gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH<sub>3</sub>)<sub>3</sub> had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH<sub>3</sub>)<sub>3</sub>, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×10<sup>19</sup>cm<sup>-3</sup> to a maximum of 2.4×10<sup>21</sup>cm<sup>-3</sup>, estimated from the Raman spectra.</p><p> </p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12923">http://dx.doi.org/10.5755/j01.ms.22.2.12923</a></p> |
| first_indexed | 2024-12-12T19:19:36Z |
| format | Article |
| id | doaj.art-b735c4e5d9e44cf69d9e73e1d43c0360 |
| institution | Directory Open Access Journal |
| issn | 1392-1320 2029-7289 |
| language | English |
| last_indexed | 2024-12-12T19:19:36Z |
| publishDate | 2016-05-01 |
| publisher | Kaunas University of Technology |
| record_format | Article |
| series | Medžiagotyra |
| spelling | doaj.art-b735c4e5d9e44cf69d9e73e1d43c03602022-12-22T00:14:38ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892016-05-0122220520810.5755/j01.ms.22.2.129236961Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor DepositionMengmei PANHongyan PENGWanbang ZHAOHongwei JIANG<p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH<sub>4</sub>/H<sub>2</sub>/B(OCH<sub>3</sub>)<sub>3</sub> gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH<sub>3</sub>)<sub>3</sub> had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH<sub>3</sub>)<sub>3</sub>, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×10<sup>19</sup>cm<sup>-3</sup> to a maximum of 2.4×10<sup>21</sup>cm<sup>-3</sup>, estimated from the Raman spectra.</p><p> </p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12923">http://dx.doi.org/10.5755/j01.ms.22.2.12923</a></p>http://matsc.ktu.lt/index.php/MatSc/article/view/12923hot cathode direct current PCVD (HCDC-PCVD), boron-doped diamond (BDD) films, structural properties |
| spellingShingle | Mengmei PAN Hongyan PENG Wanbang ZHAO Hongwei JIANG Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition Medžiagotyra hot cathode direct current PCVD (HCDC-PCVD), boron-doped diamond (BDD) films, structural properties |
| title | Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition |
| title_full | Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition |
| title_fullStr | Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition |
| title_full_unstemmed | Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition |
| title_short | Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition |
| title_sort | morphology and structure properties of boron doped diamond films prepared by hot cathode direct current plasma chemical vapor deposition |
| topic | hot cathode direct current PCVD (HCDC-PCVD), boron-doped diamond (BDD) films, structural properties |
| url | http://matsc.ktu.lt/index.php/MatSc/article/view/12923 |
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