Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer
Abstract To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202301540 |
| _version_ | 1797736294419267584 |
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| author | Miao Jiang Hirokatsu Asahara Shinobu Ohya Masaaki Tanaka |
| author_facet | Miao Jiang Hirokatsu Asahara Shinobu Ohya Masaaki Tanaka |
| author_sort | Miao Jiang |
| collection | DOAJ |
| description | Abstract To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices. |
| first_indexed | 2024-03-12T13:10:33Z |
| format | Article |
| id | doaj.art-b7aa134a15964ab3b917031a0da15fe0 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-12T13:10:33Z |
| publishDate | 2023-08-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj.art-b7aa134a15964ab3b917031a0da15fe02023-08-28T03:36:35ZengWileyAdvanced Science2198-38442023-08-011024n/an/a10.1002/advs.202301540Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single LayerMiao Jiang0Hirokatsu Asahara1Shinobu Ohya2Masaaki Tanaka3School of Materials Science and Engineering Beijing Institute of Technology Zhongguancun South Street No.5, HaidianBeijing100081ChinaDepartment of Electrical Engineering and Information Systems The University of Tokyo 7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656JapanDepartment of Electrical Engineering and Information Systems The University of Tokyo 7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656JapanDepartment of Electrical Engineering and Information Systems The University of Tokyo 7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656JapanAbstract To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.https://doi.org/10.1002/advs.202301540electric field control of magnetismmagnetization switchingsingle layerspin–orbit ferromagnetspin–orbit torque |
| spellingShingle | Miao Jiang Hirokatsu Asahara Shinobu Ohya Masaaki Tanaka Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer Advanced Science electric field control of magnetism magnetization switching single layer spin–orbit ferromagnet spin–orbit torque |
| title | Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer |
| title_full | Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer |
| title_fullStr | Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer |
| title_full_unstemmed | Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer |
| title_short | Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer |
| title_sort | electric field control of spin orbit torque magnetization switching in a spin orbit ferromagnet single layer |
| topic | electric field control of magnetism magnetization switching single layer spin–orbit ferromagnet spin–orbit torque |
| url | https://doi.org/10.1002/advs.202301540 |
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