Patterning two‐dimensional semiconductors with thermal etching
Abstract The controllable synthesis of complicated nanostructures in advanced two‐dimensional (2D) semiconductors, such as periodic regular hole arrays, is essential and remains immature. Here, we report a green, facile, highly controlled synthetic method to efficiently pattern 2D semiconductors, su...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-11-01
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| Series: | InfoMat |
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| Online Access: | https://doi.org/10.1002/inf2.12474 |
| _version_ | 1827671319828758528 |
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| author | Miaomiao Liu Ziwei Huang Yukun Guo Zhengwei Zhang Liqiang Zhang Hongmei Zhang Jiang Zhong Shanhao Li Wei Deng Di Wang Wei Li Ying Huangfu Xiangdong Yang Xidong Duan |
| author_facet | Miaomiao Liu Ziwei Huang Yukun Guo Zhengwei Zhang Liqiang Zhang Hongmei Zhang Jiang Zhong Shanhao Li Wei Deng Di Wang Wei Li Ying Huangfu Xiangdong Yang Xidong Duan |
| author_sort | Miaomiao Liu |
| collection | DOAJ |
| description | Abstract The controllable synthesis of complicated nanostructures in advanced two‐dimensional (2D) semiconductors, such as periodic regular hole arrays, is essential and remains immature. Here, we report a green, facile, highly controlled synthetic method to efficiently pattern 2D semiconductors, such as periodic regular hexagonal‐shaped hole arrays (HHA), in 2D‐TMDs. Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching, we created HHA with different arrangements, controlled hole sizes, and densities in bilayer WS2. Atomic force microscopy (AFM), Raman, photoluminescence (PL), and scanning transmission electron microscopy (STEM) characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region. Furthermore, other nanostructures, such as nanoribbons and periodic regular triangular‐shaped 2D‐TMD arrays, can be fabricated. This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials. Density functional theory (DFT) calculations show that one WS2 molecule from the edges of the laser‐irradiated holed region exhibits a robust etching activation, making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible. |
| first_indexed | 2024-03-10T03:37:29Z |
| format | Article |
| id | doaj.art-b7ceb06c1f3b4b018d56282e6ff88c67 |
| institution | Directory Open Access Journal |
| issn | 2567-3165 |
| language | English |
| last_indexed | 2024-03-10T03:37:29Z |
| publishDate | 2023-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj.art-b7ceb06c1f3b4b018d56282e6ff88c672023-11-23T09:27:33ZengWileyInfoMat2567-31652023-11-01511n/an/a10.1002/inf2.12474Patterning two‐dimensional semiconductors with thermal etchingMiaomiao Liu0Ziwei Huang1Yukun Guo2Zhengwei Zhang3Liqiang Zhang4Hongmei Zhang5Jiang Zhong6Shanhao Li7Wei Deng8Di Wang9Wei Li10Ying Huangfu11Xiangdong Yang12Xidong Duan13Hunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics Central South University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaHunan Provincial Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha the People's Republic of ChinaAbstract The controllable synthesis of complicated nanostructures in advanced two‐dimensional (2D) semiconductors, such as periodic regular hole arrays, is essential and remains immature. Here, we report a green, facile, highly controlled synthetic method to efficiently pattern 2D semiconductors, such as periodic regular hexagonal‐shaped hole arrays (HHA), in 2D‐TMDs. Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching, we created HHA with different arrangements, controlled hole sizes, and densities in bilayer WS2. Atomic force microscopy (AFM), Raman, photoluminescence (PL), and scanning transmission electron microscopy (STEM) characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region. Furthermore, other nanostructures, such as nanoribbons and periodic regular triangular‐shaped 2D‐TMD arrays, can be fabricated. This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials. Density functional theory (DFT) calculations show that one WS2 molecule from the edges of the laser‐irradiated holed region exhibits a robust etching activation, making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible.https://doi.org/10.1002/inf2.124742D transition‐metal dichalcogenide materialsatomically zigzag edgescontrolled sizedefect‐induced thermal etchingetching mechanismhexagonal‐shaped hole array |
| spellingShingle | Miaomiao Liu Ziwei Huang Yukun Guo Zhengwei Zhang Liqiang Zhang Hongmei Zhang Jiang Zhong Shanhao Li Wei Deng Di Wang Wei Li Ying Huangfu Xiangdong Yang Xidong Duan Patterning two‐dimensional semiconductors with thermal etching InfoMat 2D transition‐metal dichalcogenide materials atomically zigzag edges controlled size defect‐induced thermal etching etching mechanism hexagonal‐shaped hole array |
| title | Patterning two‐dimensional semiconductors with thermal etching |
| title_full | Patterning two‐dimensional semiconductors with thermal etching |
| title_fullStr | Patterning two‐dimensional semiconductors with thermal etching |
| title_full_unstemmed | Patterning two‐dimensional semiconductors with thermal etching |
| title_short | Patterning two‐dimensional semiconductors with thermal etching |
| title_sort | patterning two dimensional semiconductors with thermal etching |
| topic | 2D transition‐metal dichalcogenide materials atomically zigzag edges controlled size defect‐induced thermal etching etching mechanism hexagonal‐shaped hole array |
| url | https://doi.org/10.1002/inf2.12474 |
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