Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate
A lattice matched triple junction solar cell (TJSC) structure with a GaAs<sub>0.58</sub> P<sub>0.42</sub> top cell and bandgap tunable GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub> middle and bottom cells on virtual SiGe substrate is propo...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-05-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/6/630 |
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| author | Tugba S. Navruz |
| author_facet | Tugba S. Navruz |
| author_sort | Tugba S. Navruz |
| collection | DOAJ |
| description | A lattice matched triple junction solar cell (TJSC) structure with a GaAs<sub>0.58</sub> P<sub>0.42</sub> top cell and bandgap tunable GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub> middle and bottom cells on virtual SiGe substrate is proposed in this study. SiGe/Si substrate is preferred as it is a low-cost substrate and because it provides a lattice constant at which bandgap tunable dilute nitride materials that are appropriate for highly efficient multijunction solar cells can be obtained. By changing the nitrogen content in GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub>, the bandgap of the middle and bottom subcells is adjusted to the optimum values. The bandgap of the top cell is constant at 1.95 eV. Three models with different values of surface recombination velocities and Shockley–Read–Hall recombination lifetimes are applied to the presented TJSC structure. Peak efficiencies of 48.9%, 40.6% and 33.7% are achieved at E<sub>G2</sub> = 1.45 eV and E<sub>G3</sub> = 1.04 eV for Model 1, E<sub>G2</sub> = 1.45 eV and E<sub>G3</sub> = 1.15 eV for Model 2, and E<sub>G2</sub> = 1.5 eV and E<sub>G3</sub> = 1.17 eV for Model 3, respectively. A fourth bandgap adjustable GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub> junction is inserted into the system and a significant improvement is obtained under high sun concentration for Models 1 and 2. The presented original results are very promising because the variable bandgaps provide very efficient absorption of incoming spectrum. |
| first_indexed | 2024-03-11T02:02:28Z |
| format | Article |
| id | doaj.art-b7dfea8051784d88b2737caaadf97954 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-11T02:02:28Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-b7dfea8051784d88b2737caaadf979542023-11-18T12:07:31ZengMDPI AGPhotonics2304-67322023-05-0110663010.3390/photonics10060630Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe SubstrateTugba S. Navruz0Department of Electrical Electronics Engineering, Faculty of Engineering, Gazi University, 06570 Ankara, TurkeyA lattice matched triple junction solar cell (TJSC) structure with a GaAs<sub>0.58</sub> P<sub>0.42</sub> top cell and bandgap tunable GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub> middle and bottom cells on virtual SiGe substrate is proposed in this study. SiGe/Si substrate is preferred as it is a low-cost substrate and because it provides a lattice constant at which bandgap tunable dilute nitride materials that are appropriate for highly efficient multijunction solar cells can be obtained. By changing the nitrogen content in GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub>, the bandgap of the middle and bottom subcells is adjusted to the optimum values. The bandgap of the top cell is constant at 1.95 eV. Three models with different values of surface recombination velocities and Shockley–Read–Hall recombination lifetimes are applied to the presented TJSC structure. Peak efficiencies of 48.9%, 40.6% and 33.7% are achieved at E<sub>G2</sub> = 1.45 eV and E<sub>G3</sub> = 1.04 eV for Model 1, E<sub>G2</sub> = 1.45 eV and E<sub>G3</sub> = 1.15 eV for Model 2, and E<sub>G2</sub> = 1.5 eV and E<sub>G3</sub> = 1.17 eV for Model 3, respectively. A fourth bandgap adjustable GaN<sub>x</sub>As<sub>1-x-z</sub>P<sub>z</sub> junction is inserted into the system and a significant improvement is obtained under high sun concentration for Models 1 and 2. The presented original results are very promising because the variable bandgaps provide very efficient absorption of incoming spectrum.https://www.mdpi.com/2304-6732/10/6/630multijunction solar celldilute nitride photovoltaic materialSiGe virtual substrate |
| spellingShingle | Tugba S. Navruz Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate Photonics multijunction solar cell dilute nitride photovoltaic material SiGe virtual substrate |
| title | Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate |
| title_full | Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate |
| title_fullStr | Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate |
| title_full_unstemmed | Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate |
| title_short | Modeling Lattice Matched Dilute Nitride Triple and Quadruple Junction Solar Cells on Virtual SiGe Substrate |
| title_sort | modeling lattice matched dilute nitride triple and quadruple junction solar cells on virtual sige substrate |
| topic | multijunction solar cell dilute nitride photovoltaic material SiGe virtual substrate |
| url | https://www.mdpi.com/2304-6732/10/6/630 |
| work_keys_str_mv | AT tugbasnavruz modelinglatticematcheddilutenitridetripleandquadruplejunctionsolarcellsonvirtualsigesubstrate |