Diamond dislocations analysis by X-ray topography
The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, w...
| Hlavní autor: | |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
Taylor & Francis Group
2022-12-01
|
| Edice: | Functional Diamond |
| Témata: | |
| On-line přístup: | http://dx.doi.org/10.1080/26941112.2022.2149279 |