Diamond dislocations analysis by X-ray topography
The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, w...
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| Format: | Article |
| Sprog: | English |
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Taylor & Francis Group
2022-12-01
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| Serier: | Functional Diamond |
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| Online adgang: | http://dx.doi.org/10.1080/26941112.2022.2149279 |