Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs exhibited a high densi...

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Bibliographic Details
Main Authors: Ying Gu, Yi Gong, Peng Zhang, Haowen Hua, Shan Jin, Wenxian Yang, Jianjun Zhu, Shulong Lu
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Nanomaterials
Subjects:
InGaN quantum dots
micro-LEDs
molecular beam epitaxy
size effect
Online Access:https://www.mdpi.com/2079-4991/13/8/1346

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