The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors
BaTiO3 (BT) was successfully produced on a Fluorine doped tin oxide (FTO) substrate using the sol-gel method by adding Zirconium (Zr) according to the stoichiometric equation BaZrxTi1-xO3 (BZT) at compositions x = 0.4 and x = 0.6. This research aims to increase the capacitance and dielectric constan...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-05-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785422005440 |
| _version_ | 1828368337924521984 |
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| author | Rahmi Dewi Tengku Said Luqman Yanuar Hamzah Krisman Ari Sulistyo Rini |
| author_facet | Rahmi Dewi Tengku Said Luqman Yanuar Hamzah Krisman Ari Sulistyo Rini |
| author_sort | Rahmi Dewi |
| collection | DOAJ |
| description | BaTiO3 (BT) was successfully produced on a Fluorine doped tin oxide (FTO) substrate using the sol-gel method by adding Zirconium (Zr) according to the stoichiometric equation BaZrxTi1-xO3 (BZT) at compositions x = 0.4 and x = 0.6. This research aims to increase the capacitance and dielectric constant of BZT as a capacitor. BZT thin films were annealed for 2 h at 800 °C with heating rates of 5 °C/min and 10 °C/min. Based on the results, variations in the heating rate affect the size of the sample, the capacitance, and the dielectric constant values. The films were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Impedance Spectroscopy. XRD results obtained the same plane peaks, but 2θ different angles indicate tetragonal plane structure. According to SEM characterization with 50,000 times magnification, the sample with composition x = 0.4 had an average grain size of 0.36 μm ± 0.11 and 0.32 μm ± 0.08 at a heating rate of 5 °C/min and 10 °C/min, respectively. Samples with composition x = 0.6 at a heating rate of 5 °C/min had an average grain size of 0.33 μm ± 0.09 and 0.18 μm ± 0.01 at a heating rate of 10 °C/min. Impedance spectroscopy characterization, the capacitance value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min has a value greater than composition x = 0.6 at the same heating rates. Furthermore, the dielectric constant value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min is more significant than composition x = 0.6. |
| first_indexed | 2024-04-14T06:09:42Z |
| format | Article |
| id | doaj.art-b829601b0b344c9e8e01659442dd2905 |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-04-14T06:09:42Z |
| publishDate | 2022-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj.art-b829601b0b344c9e8e01659442dd29052022-12-22T02:08:25ZengElsevierJournal of Materials Research and Technology2238-78542022-05-011838263833The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitorsRahmi Dewi0Tengku Said Luqman1Yanuar Hamzah2 Krisman3Ari Sulistyo Rini4Corresponding author.; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, 28293, Pekanbaru, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, 28293, Pekanbaru, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, 28293, Pekanbaru, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, 28293, Pekanbaru, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, 28293, Pekanbaru, IndonesiaBaTiO3 (BT) was successfully produced on a Fluorine doped tin oxide (FTO) substrate using the sol-gel method by adding Zirconium (Zr) according to the stoichiometric equation BaZrxTi1-xO3 (BZT) at compositions x = 0.4 and x = 0.6. This research aims to increase the capacitance and dielectric constant of BZT as a capacitor. BZT thin films were annealed for 2 h at 800 °C with heating rates of 5 °C/min and 10 °C/min. Based on the results, variations in the heating rate affect the size of the sample, the capacitance, and the dielectric constant values. The films were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Impedance Spectroscopy. XRD results obtained the same plane peaks, but 2θ different angles indicate tetragonal plane structure. According to SEM characterization with 50,000 times magnification, the sample with composition x = 0.4 had an average grain size of 0.36 μm ± 0.11 and 0.32 μm ± 0.08 at a heating rate of 5 °C/min and 10 °C/min, respectively. Samples with composition x = 0.6 at a heating rate of 5 °C/min had an average grain size of 0.33 μm ± 0.09 and 0.18 μm ± 0.01 at a heating rate of 10 °C/min. Impedance spectroscopy characterization, the capacitance value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min has a value greater than composition x = 0.6 at the same heating rates. Furthermore, the dielectric constant value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min is more significant than composition x = 0.6.http://www.sciencedirect.com/science/article/pii/S2238785422005440BZT thin filmsSol-gel methodHeating rateCapacitance |
| spellingShingle | Rahmi Dewi Tengku Said Luqman Yanuar Hamzah Krisman Ari Sulistyo Rini The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors Journal of Materials Research and Technology BZT thin films Sol-gel method Heating rate Capacitance |
| title | The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors |
| title_full | The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors |
| title_fullStr | The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors |
| title_full_unstemmed | The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors |
| title_short | The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors |
| title_sort | effect of heating rate on bazrxti1 xo3 thin film for x 0 4 and x 0 6 as capacitors |
| topic | BZT thin films Sol-gel method Heating rate Capacitance |
| url | http://www.sciencedirect.com/science/article/pii/S2238785422005440 |
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