RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resist...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2014-02-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/14/2/3493 |
| _version_ | 1817989477950291968 |
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| author | Farahiyah Mustafa Abdul Manaf Hashim |
| author_facet | Farahiyah Mustafa Abdul Manaf Hashim |
| author_sort | Farahiyah Mustafa |
| collection | DOAJ |
| description | We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. |
| first_indexed | 2024-04-14T00:47:22Z |
| format | Article |
| id | doaj.art-b840dc93da18466887a2e36512fd6600 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T00:47:22Z |
| publishDate | 2014-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-b840dc93da18466887a2e36512fd66002022-12-22T02:21:59ZengMDPI AGSensors1424-82202014-02-011423493350510.3390/s140203493s140203493RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication SystemFarahiyah Mustafa0Abdul Manaf Hashim1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, MalaysiaMalaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, MalaysiaWe report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.http://www.mdpi.com/1424-8220/14/2/3493direct integrationSchottky diodedipole antennaproximity communication |
| spellingShingle | Farahiyah Mustafa Abdul Manaf Hashim RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System Sensors direct integration Schottky diode dipole antenna proximity communication |
| title | RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System |
| title_full | RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System |
| title_fullStr | RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System |
| title_full_unstemmed | RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System |
| title_short | RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System |
| title_sort | rf to dc characteristics of direct irradiated on chip gallium arsenide schottky diode and antenna for application in proximity communication system |
| topic | direct integration Schottky diode dipole antenna proximity communication |
| url | http://www.mdpi.com/1424-8220/14/2/3493 |
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