A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-08-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/17/4940 |
| _version_ | 1797521190308282368 |
|---|---|
| author | Iwona Sankowska Agata Jasik Krzysztof Czuba Jacek Ratajczak Paweł Kozłowski Marek Wzorek |
| author_facet | Iwona Sankowska Agata Jasik Krzysztof Czuba Jacek Ratajczak Paweł Kozłowski Marek Wzorek |
| author_sort | Iwona Sankowska |
| collection | DOAJ |
| description | In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 10<sup>6</sup> cm<sup>−2</sup> –#SL400, 1.01 × 10<sup>6</sup> cm<sup>−2</sup> –#SL300, 0.51 × 10<sup>6</sup> cm<sup>−2</sup> –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300. |
| first_indexed | 2024-03-10T08:08:08Z |
| format | Article |
| id | doaj.art-b84e2369266440df87516b4c66ae9c14 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:08:08Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-b84e2369266440df87516b4c66ae9c142023-11-22T10:53:54ZengMDPI AGMaterials1996-19442021-08-011417494010.3390/ma14174940A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space MappingIwona Sankowska0Agata Jasik1Krzysztof Czuba2Jacek Ratajczak3Paweł Kozłowski4Marek Wzorek5Łukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, PolandIn this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 10<sup>6</sup> cm<sup>−2</sup> –#SL400, 1.01 × 10<sup>6</sup> cm<sup>−2</sup> –#SL300, 0.51 × 10<sup>6</sup> cm<sup>−2</sup> –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300.https://www.mdpi.com/1996-1944/14/17/4940diffuse scatteringreciprocal space mappingInAs/GaSb type-II superlattice |
| spellingShingle | Iwona Sankowska Agata Jasik Krzysztof Czuba Jacek Ratajczak Paweł Kozłowski Marek Wzorek A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping Materials diffuse scattering reciprocal space mapping InAs/GaSb type-II superlattice |
| title | A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping |
| title_full | A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping |
| title_fullStr | A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping |
| title_full_unstemmed | A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping |
| title_short | A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping |
| title_sort | study of defects in inas gasb type ii superlattices using high resolution reciprocal space mapping |
| topic | diffuse scattering reciprocal space mapping InAs/GaSb type-II superlattice |
| url | https://www.mdpi.com/1996-1944/14/17/4940 |
| work_keys_str_mv | AT iwonasankowska astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT agatajasik astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT krzysztofczuba astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT jacekratajczak astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT pawełkozłowski astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT marekwzorek astudyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT iwonasankowska studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT agatajasik studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT krzysztofczuba studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT jacekratajczak studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT pawełkozłowski studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping AT marekwzorek studyofdefectsininasgasbtypeiisuperlatticesusinghighresolutionreciprocalspacemapping |